SQ4425EY

www.vishay.com SQ4425EY Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET SO-8 Single D D5 D6 D7 8 4 3G 2S 1S S Top View PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 30 0.012 0.019 - 18 Single FEATURES TrenchFET® Power MOSFET AEC-Q101 qualified c 100 % Rg and UIS tested Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 S G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SO-8 SQ4425EY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current TC = 25 °C TC = 125 °C ID Continuous source current (diode conduction) IS Pulsed drain current a IDM Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation a TC = 25 °C TC = 125 °C PD Operating junction and storage temperature range TJ, Tstg LIMIT - 30 ± 20 - 18 - 10 -6 - 70 - 38 72 6.8 2.2 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR-4 material) c. Parametric verification ongoing PCB mount b SYMBOL RthJA RthJF LIMIT 85 22 UNIT °C/W S21-0678-Rev. C, 21-Jun-2021 1 Document Numbe...