SQ4153EY

www.vishay.com SQ4153EY Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -4.5 V RDS(on) (Ω) at VGS = -2.5 V RDS(on) (Ω) at VGS = -1.8 V ID (A) Configuration Package -12 0.0065 0.0080 0.0130 -25 Single SO-8 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SO-8 Single D D5 D6 D7 8 S G 4 3G 2S 1S S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current a TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) a Pulsed Drain Current b IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -12 ±8 -25 -14 -6.5 -100 -19 18 7.1 2.3 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). PCB Mount c SYMBOL RthJA RthJF LIMIT 85 21 UNIT V A mJ W °C UNIT °C/W S15-2200, Rev. A, 14-Sep-15 1 Document Number: 66897 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT ...