SQ3461EV

www.vishay.com SQ3461EV Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -4.5 V RDS(on) (Ω) at VGS = -2.5 V RDS(on) (Ω) at VGS = -1.8 V ID (A) Configuration Package -12 0.025 0.032 0.043 -8 Single TSOP-6 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified c 100 % Rg and UIS tested Compliant to RoHS Directive 2002/95/EC Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TSOP-6 Single S 4 D 5 D 6 S G 1 D Top View 2 D 3 G Marking Code: 8UY D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current c Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -12 ±8 -8 -6.6 -6.3 -30 -17 14 5 1.67 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Package limited. PCB Mount b SYMBOL RthJA RthJF LIMIT 110 30 UNIT V A mJ W °C UNIT °C/W S15-2401-Rev. A, 12-Oct-15 1 Document Number: 62994 For technical questions, contact: [email protected] ...