SQ2325ES

www.vishay.com SQ2325ES Vishay Siliconix Automotive P-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V ID (A) Configuration SOT-23 (TO-236) D 3 1 G Top View Marking Code: 8Rxxx 2 S -150 1.77 -0.84 Single S G D P-Channel MOSFET FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912          ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2325ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -150 ± 20 -0.84 -0.48 -3.7 -2 4.8 1.12 3 1 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). PCB Mount b SYMBOL RthJA RthJF LIMIT 166 50 UNIT V A mJ W °C UNIT °C/W S15-0188-Rev. B, 16-Feb-15 1 Document Number: 67847 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTI...