SQ2318AES

www.vishay.com SQ2318AES Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration SOT-23 (TO-236) D 3 40 0.031 0.036 8 Single FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D Marking Code: 8Y 1 G Top View 2 S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2318AES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 40 ± 20 8 4.6 3.8 32 13 8 3 1 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 166 50 UNIT °C/W S13-2477-Rev. A, 09-Dec-13 1 Document Number: 62911 For technical questions, contact: automostechsupport@vishay.com ...