SQ2309ES

www.vishay.com SQ2309ES Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 60 0.335 0.500 - 1.7 Single FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) S G1 S2 3D G Top View SQ2309ES* * Marking Code:8Pxxx D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2309ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 60 ± 20 - 1.7 -1 - 2.6 - 6.8 - 15 11 2 0.6 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 166 73 UNIT V A mJ W °C UNIT °C/W S11-2111-Rev. B, 07-Nov-11 1 Document Number: 67024 THIS DOCUMENT IS SUBJECT TO...