SQ1902AEL

www.vishay.com SQ1902AEL Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V ID (A) Configuration Package 20 0.415 0.600 0.78 Dual SC-70 FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified c Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-363 SC-70 Dual (6 leads) S2 G2 4 D1 5 6 Marking Code: 9P 1 S1 Top View 2 G1 3 D2 D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) TC = 25 °C TC = 125 °C Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation a TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 20 ± 12 0.78 0.45 0.54 3 3.5 0.6 0.43 0.14 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. PCB Mount b SYMBOL RthJA RthJF LIMIT 460 350 UNIT °C/W S15-1917-Rev. A, 17-Aug-15 1 Document Number: 62977 For technical questions, contact: automostechsupport@vish...