BF1102R

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Dual N-channel dual gate MOS-FETs Product specification BF1102; BF1102R FEATURES Two low noise gain controlled amplifiers in a single package Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment. PINNING - SOT363 DESCRIPTION PIN BF1102 BF1102R 1 gate 1 (1) gate 1 (1) 2 gate 2 (1 and 2) source (1 and 2) 3 drain (1) drain (1) 4 drain (2) drain (2) 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) handbook, halfpage g2 (1, 2) DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges. Both devices have a SOT363 micro-miniature plastic package. 654 g1 (1) AMP1 d (1) g1 (2) AMP2 d (2) 123 BF1102 marking code: W1. BF1102R marking code: W2-. ...