SI3481DV

P-Channel 30-V (D-S) MOSFET Si3481DV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.048 at VGS = - 10 V - 30 0.079 at VGS = - 4.5 V ID (A) - 5.3 - 4.1 FEATURES TrenchFET® Power MOSFET APPLICATIONS Load Switch RoHS COMPLIANT 3 mm TSOP-6 Top View 16 25 34 2.85 mm Ordering Information: Si3481DV-T1-E3 (Lead (Pb)-free) (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 5.3 - 4.2 - 4.0 - 3.2 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.14 1.3 0.73 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 55 90 30 Maximum 62.5 110 36 Unit °C/W Document Number: 72105 S-60422-Rev. C, 20-Mar-06 www.vishay.com 1 Si3481DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS...