PJF6NA90

PPJP6NA90 / PJF6NA90 / PJZ6NA90 900V N-Channel MOSFET Voltage 900 V Current 6A Features  RDS(ON), VGS@10V,ID@3A<2.3Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : TO-220AB, ITO-220AB-F, TO-3PL Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams  ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams  TO-3PL Approx. Weight : 0.182 ounces, 5.174grams ITO-220AB-F TO-220AB Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA  Limited only By Maximum Junction Temperature TO-220AB 167 1.34 0.75 62.5 ITO-220AB-F 900 +30 6 24 600 56 0.45 -55~150 2.23 120 TO-3PL 192 1.54 0.65 50 UNITS V V A A mJ W W/ oC oC oC/W April 21,2015-REV.00 Page 1 PPJP6NA90 / PJF6NA90 / PJZ6NA90 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Thresh...