PPJW4P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-4.0 A
SOT-223
Features
RDS(ON), VGS@-10V...
PPJW4P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-4.0 A
SOT-223
Features
RDS(ON), VGS@-10V,
[email protected]<110mΩ RDS(ON),
[email protected],
[email protected] A<130mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
1
Case : SOT-223 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.043 ounces, 0.123 grams Marking: W4P06A
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25oC TA=70oC
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25oC TA=70oC
Single Pulse Avalanche Energy (Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 6)
SYMBOL VDS VGS ID IDM PD EAS
TJ,TSTG
RθJA
Limited only By Maximum Junction Temperature
LIMIT -60 +20 -4 -3.2 -16 3.1 2 12.8
-55~150
40.3
UNITS V V A A W mJ oC
oC/W
July 7,2015-REV.00
Page 1
PPJW4P06A
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output...
