PJW3P10A

PPJW3P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -2.6 A SOT-223 Features  RDS(ON), VGS@-10V,ID@-2.6A<210mΩ  RDS(ON), VGS@-4.5V,ID@-1A<230mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data 1  Case : SOT-223 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.043 ounces, 0.123grams  Marking : W3P10A Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation TA=25oC TA=70oC TA=25oC TA=70oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 5) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA  Limited only By Maximum Junction Temperature LIMIT -100 +20 -2.6 -2.0 -10.4 3.1 2 -55~150 40.3 UNITS V V A A W oC oC/W July 21,2015-REV.00 Page 1 PPJW3P10A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On De...