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PJW1NA80 Dataheets PDF



Part Number PJW1NA80
Manufacturers Pan Jit International
Logo Pan Jit International
Description 800V N-Channel MOSFET
Datasheet PJW1NA80 DatasheetPJW1NA80 Datasheet (PDF)

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) TO-220AB SOT-223 TO-252 TO-251AB Mechanical Data  Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package  Terminals : Solderable per M.

  PJW1NA80   PJW1NA80


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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) TO-220AB SOT-223 TO-252 TO-251AB Mechanical Data  Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams  SOT-223 Approx. Weight : 0.043 ounces, 0.123grams  TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC VDS VGS ID IDM EAS PD Operating Junction and Storage Temperature Range TJ,TSTG Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA TO-251AB 34 0.27 3.68 110 TO-220AB TO-252 800 +30 1 4 23 45 34 0.36 0.27 -55~150 2.78 3.68 62.5 110  Limited only By Maximum Junction Temperature SOT-223 0.3 1.2 3.3 0.026 UNITS V V A A mJ W W/ oC oC 37.9 (Note 4) oC/W March 10,2014-REV.00 Page 1 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS(th) RDS(on) IDSS IGSS VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=0.5A VDS=800V,VGS=0V VGS=+30V,VDS=0V IS=1A,VGS=0V Qg Qgs Qgd Ciss Coss Crss VDS=640V, ID=1A, VGS=10V (Note 2,3) VDS=25V, VGS=0V, f=1.0MHZ 800 - -V 3.1 3.5 4.4 V - 12.5 16 Ω - - 1.0 uA - - +100 nA - - 1.4 V -6- 1.3 - 2.6 - 203 - 17 -1- nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) tr td(off) tf VDD=400V, ID=1A, RG=25Ω (Note 2,3) -8- 15 - ns - 13 - 21 - Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS --- - - 1 A Maximum Pulsed Drain-Source Diode Forward Current ISM --- - - 4 A Reverse Recovery Time Reverse Recovery Charge NOTES : trr VGS=0V, IS=1A Qrr dIF/ dt=100A/us (Note 2) - 160 - 0.3 - ns uC 1. L=30mH, IAS=1.17A, VDD=110V, RG=25ohm, Starting TJ=25oC 2. Pulse width<300us, Duty cycle<2% 3. Essentially independent of operating temperature typical characteristics. 4. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 5. Guaranteed by design, not subject to production testing March 10,2014-REV.00 Page 2 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 TYPICAL CHARACTERISTIC CURVES Fig.1 Output Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction Temperature Fig.5 Capacitance vs. Drain-Source Voltage March 10,2014-REV.00 Fig.6 Source-Drain Diode Forward Voltage Page 3 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 TYPICAL CHARACTERISTIC CURVES Fig.7 Gate Charge Fig.8 BVDSS vs. Junction Temperature Fig.9 Threshold Voltage Variation with Temperature Fig.10 Maximum Safe Operating Area Fig.11 Maximum Safe Operating Area March 10,2014-REV.00 Fig.12 Maximum Safe Operating Area Page 4 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 TYPICAL CHARACTERISTIC CURVES Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width Fig.14 PJP1NA80 Normalized Transient Thermal Impedance vs. Pulse Width Fig.15 PJW1NA80 Normalized Transient Thermal Impedance vs. Pulse Width March 10,2014-REV.00 Page 5 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 Packaging Information TO-220AB Dimension . Unit: mm SOT-223 Dimension Unit: mm TO-252 Dimension Unit: mm TO-251AB Dimension Unit: mm March 10,2014-REV.00 Page 6 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 PART NO PACKING CODE VERSION Part No Packing Code PJU1NA80_T0_00001 PJD1NA80_L2_00001 PJW1NA80_R2_00001 PJP1NA80_T0_00001 Package Type TO-251AB TO-252 SOT-223 TO-220AB Packing type 80pcs / Tube 3,000pcs / 13” reel 2,500pcs / 13” reel 50pcs / Tube Marking U1NA80 D1NA80 1NA80 P1NA80 Version Halogen free Halogen free Halogen free Halogen free March 10,2014-REV.00 Page 7 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 Disclaimer ● Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. ● Panjit Inter.


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