PJD1NA50

PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET Voltage 500 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) TO-92 SOT-223 TO-252 TO-251AB Mechanical Data  Case : TO-251AB, TO-252, SOT-223, TO-92 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-252 Approx. Weight : 0.0104 ounces, 0.297grams  SOT-223 Approx. Weight : 0.043 ounces, 0.123grams  TO-92 Approx. Weight : 0.007 ounces, 0.196grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AB TO-252 SOT-223 TO-92 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA 500 +30 1 0.3 4 1.2 42 25 3.3 3 0.2 0.026 0.024 -55~150 5 110 37.9 (Note 4) 140  Limited only By Maximum Junction Temperature UNITS V V A A mJ W W/ oC oC oC/W August 07,2014-REV.01 Page 1 PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 Electrical Characteristics o (TA=25 C un...