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PJF2NA90

Pan Jit International

900V N-Channel MOSFET

PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 900V N-Channel MOSFET Voltage 900 V Current 2A Features  RDS(ON), VGS@...


Pan Jit International

PJF2NA90

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Description
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 900V N-Channel MOSFET Voltage 900 V Current 2A Features  RDS(ON), VGS@10V,ID@1A<6.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data ITO-220AB-F TO-220AB  Case : TO-251AB ,TO-220AB, ITO-220AB-F, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.0667 ounces, 1.89 grams  ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams  TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS PD TJ,TSTG 50 0.4 900 +30 2 8 148 80 0.64 39 0.31 -55~150 V V A A mJ 50 W 0.4 W/ oC oC Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA 2.5 110 1.56 62.5 3.21 120 2.5 oC/W 110  Limited only By Maximum Junction Temperature April 24,2015-REV.00 Page 1 PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 Electrical Characteristics o (TA...




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