IPA65R650CE

IPD65R650CE,IPA65R650CE MOSFET 650VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyrecommended. Note2:*65CE650isFullPAKmarkingonly DPAK tab 2 1 3 PG-TO220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 650 mΩ ID. 10.1 A Qg.typ 23 nC ID,pulse 18 A Eoss@400V 2 µJ Type/OrderingCode IPD65R650CE IPA65R650CE Package PG-TO 252 PG-TO 220 FullPAK Marking R...