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BUK662R5-30C Dataheets PDF



Part Number BUK662R5-30C
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS intermediate level FET
Datasheet BUK662R5-30C DatasheetBUK662R5-30C Datasheet (PDF)

BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermedi.

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BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 Min Typ Max Unit - - 30 V [1] - - 100 A - - 204 W - 2.4 2.8 mΩ NXP Semiconductors BUK662R5-30C N-channel TrenchMOS intermediate level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 13; see Figure 14 [1] Continuous current is limited by package. 2. Pinning information Min Typ Max Unit - - 501 mJ - 33.3 - nC Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain S source D mounting base; connected to drain Simplified outline mb 2 13 SOT404 (D2PAK) 3. Ordering information Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name BUK662R5-30C D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) BUK662R5-30C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 NXP Semiconductors BUK662R5-30C N-channel TrenchMOS intermediate level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Parameter drain-source voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed [1] [2] ID drain current IDM peak drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 [3] [3] Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 25 °C; see Figure 2 IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C [3] ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [4][5][6] Min -16 -20 - -55 -55 - - - [1] -16V accumulated duration not to exceed 168 hrs. [2] Accumulated pulse duration not to exceed 5 mins. [3] Continuous current is limited by package. [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information. Max Unit 30 V 16 V 20 V 100 A 100 A 783 A 204 W 175 °C 175 °C 100 A 783 A 501 mJ -J BUK662R5-30C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 NXP Semiconductors 200 ID (A) 160 120 80 40 0 0 003aae559 (1) 50 100 150 200 Tmb (°C) BUK662R5-30C N-channel TrenchMOS intermediate level FET 120 Pder (%) 80 03na19 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature 103 ID (A) 102 Limit RDSon = VDS / ID 10 1 Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aae530 tp =10 μ s 100 μ s DC 1 ms 10 ms 100 ms 10-1 10-1 1 10 102 V DS (V) Tmb = 25°C; IDM is a single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK662R5-30C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 NXP Semiconductors BUK662R5-30C N-channel TrenchMOS intermediate level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from jun.


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