Document
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 14 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate
drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power
steering Motors, lamps and solenoid control
Start-Stop micro-hybrid applications Transmission control Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11
Min Typ Max Unit - - 30 V [1] - - 100 A - - 204 W
- 2.4 2.8 mΩ
NXP Semiconductors
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dynamic characteristics
ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 13;
see Figure 14
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit - - 501 mJ
- 33.3 - nC
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description G gate D drain S source D mounting base; connected to
drain
Simplified outline
mb
2 13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK662R5-30C
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped)
BUK662R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
2 of 14
NXP Semiconductors
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS
Parameter drain-source voltage gate-source voltage
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed
[1] [2]
ID drain current IDM peak drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
[3] [3]
Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current ISM peak source current Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
EDS(AL)R
repetitive drain-source avalanche energy
Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C
[3]
ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[4][5][6]
Min -16 -20 -
-55 -55
-
-
-
[1] -16V accumulated duration not to exceed 168 hrs. [2] Accumulated pulse duration not to exceed 5 mins. [3] Continuous current is limited by package. [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information.
Max Unit 30 V 16 V 20 V 100 A 100 A 783 A
204 W 175 °C 175 °C
100 A 783 A
501 mJ
-J
BUK662R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
NXP Semiconductors
200 ID (A) 160
120
80
40
0 0
003aae559
(1)
50 100 150 200 Tmb (°C)
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
120
Pder (%)
80
03na19
40
0 0 50 100 150 200 Tmb (°C)
Fig 1. Continuous drain current as a function of mounting base temperature
103 ID (A)
102
Limit RDSon = VDS / ID
10
1
Fig 2. Normalized total power dissipation as a function of mounting base temperature
003aae530
tp =10 μ s 100 μ s
DC 1 ms
10 ms 100 ms
10-1 10-1 1 10 102 V DS (V)
Tmb = 25°C; IDM is a single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK662R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
NXP Semiconductors
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from jun.