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CHV2412-QDG Dataheets PDF



Part Number CHV2412-QDG
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description Fully integrated HBT K-Band VCO
Datasheet CHV2412-QDG DatasheetCHV2412-QDG Datasheet (PDF)

CHV2412-QDG Fully integrated HBT K-Band VCO Description The CHV2412-QDG is a monolithic multifunction for frequency generation. It integrates an X-band "push-push" oscillator with frequency control (VCO) thanks to base-collector diodes used as varactors, a Kband buffer amplifiers and a divider by 8. All the active devices are internally self-biased. The circuit is delivered in a 24 Leads RoHS compliant QFN4x4 package. UUMMSS AV3264681782A YYYYWWWWG Plastic package Main Features ■ K-band VC.

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CHV2412-QDG Fully integrated HBT K-Band VCO Description The CHV2412-QDG is a monolithic multifunction for frequency generation. It integrates an X-band "push-push" oscillator with frequency control (VCO) thanks to base-collector diodes used as varactors, a Kband buffer amplifiers and a divider by 8. All the active devices are internally self-biased. The circuit is delivered in a 24 Leads RoHS compliant QFN4x4 package. UUMMSS AV3264681782A YYYYWWWWG Plastic package Main Features ■ K-band VCO+K bufffers+Prescaler/8 ■ Fully integrated VCO (no need for external resonator) ■ Low phase noise ■ High temperature range ■ High frequency stability ■ On chip self-biased devices ■ Standard SMD package: 24L-QFN4x4 ■ MSL1 RF Frequency (GHz) 26 25.6 25.2 24.8 24.4 24 23.6 23.2 +25°C 22.8 -40°C 22.4 +105°C 22 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 V_Tune (V) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter F_out Output frequency range on RF_out port F_vco VCO frequency IF_out Output Intermediate frequency P_out Output power on RF_out port PFI Output power at Intermediate freq. (IF) PN SSB Phase Noise @F_out@100KHz Min 24.0 F_out/2 F_out/16 13 -3 Typ 24.125 16 0 -90 Max 24.25 -80 Unit GHz GHz GHz dBm dBm dBc/Hz Ref. : DSCHV2412-QDG4120 - 30 Apr 14 1/11 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHV2412-QDG K-Band VCO Electrical Characteristics VCO & buffer section Symbol Parameters F_out Output Frequency range (Operating band) F_vco VCO frequency V_Tune Voltage Tuning range Tuning sensitivity Frequency drift rate H1 Harmonics 1/2F_out H3 Harmonics 3/2 F_out H4 Harmonics 2 F_out PN SSB Phase Noise given @ F_out @ 100 KHz Main Output (RF_Out) VSWR L_Pull Load Pulling into 2:1 VSWR for all phases PB_Pull Prescaler & 12GHz buffer switching pulling Pushing @ within the V_tune range P_out Output Power on RF_out port @ 5V supply Positive supply current Min Typ Max Unit 24 24.25 GHz F_out/2 GHz 1 6V 250 400 725 MHz/V 5 MHz/°C -40 dBc -40 dBc -20 dBc -90 -80 dBc/H z 2:1 8 MHz 3 MHz 250 MHz/V 13 16 19 dBm 140 170 mA Prescaler section Symbol Parameters IF_out IF Output Frequency Output Power +ID Prescaler positive supply current Prescaler Output (IF) VSWR +IB 12GHz prescaler’s buffer positive supply current Min Typ Max F_out/16 -3 0 15 26 40 2:1 246 Unit GHz dBm mA mA General section Symbol Parameters Min Typ +V Positive supply voltage (VB,V1,VB1,V2,VB2,VD) 5 +I Total Positive supply current (IB+IB1+IB2+I1+I2+ID) 170 Top Operating temperature range -40 All the parameters are specified between 1V and 6V of Tuning Voltage Max 216 +105 Unit V mA °C Ref. : DSCHV2412-QDG4120 - 30 Apr 14 2/11 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 9.


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