GaAs Monolithic Microwave IC
CHV2411aQDG
Fully Integrated HBT K-band VCO
GaAs Monolithic Microwave IC in QFN package
Description
The CHV2411aQDG is...
Description
CHV2411aQDG
Fully Integrated HBT K-band VCO
GaAs Monolithic Microwave IC in QFN package
Description
The CHV2411aQDG is a monolithic multifunction for frequency generation. It integrates an X-band “push-push” oscillator with frequency control (VCO) thanks to base-collector diodes, used as varactors, a K-band buffer amplifiers and a divider by 8. The VCO is fully integrated on HBT process. All the active devices are internally self-biased.
The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. The chip is delivered in a 24 Leads RoHS compliant QFN4x4 package.
Main Features
■ K-band VCO+K bufffers+Prescaler/8 ■ Fully integrated VCO
(no need for external resonator) ■ Low phase noise ■ High temperature range ■ High frequency stability ■ On chip self-biased devices ■ Standard SMD package: 24L-QFN4x4
Main Characteristics
RF Frequency (GHz)
UUMMSS VYA2Y34W6168W178AAG YYWW
Plastic package
+V
V_Tune
x2
2
÷8
IF_out
RF_out
26.0 25.6 25.2 24.8 24.4 24.0 23.6 23.2 22.8 22.4 22.0
1.0
RF Output Frequency vs Vtune
-40°C
+25°C
+105°C
2.0 3.0 4.0 5.0 V_Tune (V)
6.0
Symbol
Parameter
Min Typ Max Unit
F_out Output frequency range on RF_out port
24.0 24.125 24.25 GHz
F_vco VCO frequency
F_out/2
GHz
IF_out Output Intermediate frequency
F_out/16
GHz
P_out Output power on RF_out port
13 16
dBm
PFI Output power at Intermediate freq. (IF)
-3 0
dBm
PN SSB Phase Noise @F_out@100KHz
-90 -80 d...
Similar Datasheet