GaAs Monolithic Microwave IC
CHV2270
RoHS Compliant
Fully Integrated Ku-band HBT VCO Low cost / High linearity
GaAs Monolithic Microwave IC
Descrip...
Description
CHV2270
RoHS Compliant
Fully Integrated Ku-band HBT VCO Low cost / High linearity
GaAs Monolithic Microwave IC
Description
The CHV2270 is a multifunction for frequency generation. It integrates a C-band balanced voltage controlled oscillator providing a Ku-band output (2nd harmonic), with different modulation slopes control and other functions like linearity improvement device making it suitable for radar modulations. It also includes a dual rank prescaler, an adjustable medium power amplifier and a temperature sensor. The VCO is fully integrated on HBT process. On chip base-collector diodes are used as varactors. All the active devices are internally self biased to ease bias configuration. This chip is compatible with automatic equipment for assembly. The circuit is manufactured on HBT process 2µm emitter length, via holes through the substrate and high Q passive elements. It is available in chip form.
G L IN
+V SET HP
Vmt Vft Vct
SET N
6.375GHz
x2
RF_OUT
12.75GHz
÷N
VCO HBT
P res N_ O UT
Vtemp
VCO multifunction block diagram
Main Features
-40°C to +125°C temperature range Low temperature dependence Fully integrated VCO architecture Prescaler by up to F_out/128 Low phase noise Low cost / high linearity oriented Adjustable output power Temperature sensor Very simple bias configuration Low DC power consumption Automatic assembly oriented SiNx layer protection Chip size: 1.38 x 2.05 x 0.1mm
Main Characteristics
Tamb = +25°C
Symbol
Parameter
F_out (GHz)
Typica...
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