2SC4466

UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable for audio and general purpose, etc.  FEATURES * High DC current gain * High collector-base breakdown voltage  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC4466L-x-T3P-T 2SC4466G-x-T3P-T TO-3P Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-019.c 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 80 6 V V Collector Current Base Current IC 6 A IB 3 A Collector Power Dissipation (TC=25°C) Junction Temperature Pc 60 W TJ 150 °C Storage Temperature TSTG -55 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Of...