UNISONIC TECHNOLOGIES CO., LTD
2SA1694
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
DE...
UNISONIC TECHNOLOGIES CO., LTD
2SA1694
PNP EPITAXIAL SILICON
TRANSISTOR
SILICON
PNP EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SA1694 is a silicon
PNP epitaxial planar
transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc.
The UTC 2SA1694 is suitable for audio and general purpose, etc.
FEATURES
* High DC current gain * High collector-base breakdown voltage
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SA1694L-x-T3P-T
2SA1694G-x-T3P-T
TO-3P
2SA1694L-x-T3N-T
2SA1694G-x-T3N-T
TO-3PN
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment 123 BCE BCE
Packing
Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R214-016.D
2SA1694
PNP EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
-120 -120
V V
Emitter-Base Voltage Collector Current
VEBO IC
-6 -8
V A
Base Current
IB -3 A
Collector Power Dissipation (TC=25°C) PC 80 W
Junction Temperature Storage Temperature
TJ TSTG
150 -55 ~150
°C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless...