B1007

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SB1007 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE -80 -80 -5 -0.7 1.2 10 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=-50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=-50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA ICBO Collector cut-off current IEBO Emitter cut-off current VCB=-50V; IE=0 VEB=-4V; IC=0 hFE DC current gain IC=-0.1A ; VCE=-3V COB Output capacitance IE=0; VCB=-10V;f=1MHz fT Transition frequency IE=50mA ; VCE=-10V Product Specification 2SB1007 MIN TYP. MAX UNIT -80 V -80 V -5 V -0.2 -0.4 V -0.5 µA -0.5 µA 82 390 14 20 pF 100 MHz hFE Classifications PQ 82-180 120-270 R 180-390 2 Savant...