IGBT
IGBT Module-Single
□ : CIRCUIT
(E) 4
(G) 3
(E) 2
(C) 1
80
600 A,1200V
QS043-402-(2/5)
PHMB600BS12 PHMB600BS12C
...
Description
IGBT Module-Single
□ : CIRCUIT
(E) 4
(G) 3
(E) 2
(C) 1
80
600 A,1200V
QS043-402-(2/5)
PHMB600BS12 PHMB600BS12C
□ : OUTLINE DRAWING
110
93 ±0.25
4 - Ø6.5 2 -M8 4 - Ø6.5
4 2 -M6
1 2
20 20 62 ±0 .25 48
20
3
2 -M4 13 21
29
2 -M4
108 93 9
4 3
2
1
24 20 11
29
7 14 23 13 16 62
7 23 25.5
+1.036 - 0.5
+1.025.5 - 0.5
LABEL
LABEL
PH MB600BS12
PH MB600BS12C
Dimension:[mm]
□ : MAXIMUM RATINGS (TC=25℃)
Item
Symbol
Rated Value
Unit
コレクタ・エミッタ Collector-Emitter Voltage
VCES
1,200
V
ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage
VGES
±20
V
コレク Collector
コレク Collector
タ Current
タ Power Dissipation
DC 1ms
IC ICP
PC
600 1,200
3,600
A W
Junction Temperature Range
Tj
-40~+150
℃
Storage Temperature Range
Tstg
-40~+125
℃
(Terminal to Base AC,1minute) Isolation Voltage
VISO
2,500
V(RMS)
め け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Terminals
Ftor
3(30.6) PHMB600BS12 M4 1 4(14 3) PHMB600BS12C
M8 10 5(107)
3(30.6)
N・m
M4 1 4(14 3) (kgf・cm)
M6 3(30 6)
□ : ELECTRICAL CHARACTERISTICS (TC=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ Collector-Emitter Cut-Off Current
ICES
VCE= 1200V,VGE= 0V
- - .0 mA
ゲートれ Gate-Emitter Leakage Current
IGES
VGE= ±20V,VCE= 0V
-
-
1.0
μA
コレクタ・エミッタ Collector-Emitter Saturation Voltage
VCE(sat) IC= 600A,VGE= 15V
- 2.3 2.7 V
ゲ ー ト しきい Gate-Emitter Threshold Voltage
VGE(th)
VCE= 5V,IC= 600mA
4.0 - 8.0 V
Input Capacitance
Cies
VCE= 10V,VGE...
Similar Datasheet
- phmb600bs12 IGBT - Nihon Inter Electronics
- phmb600bs12c IGBT - Nihon Inter Electronics