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PHMB200BS12

Nihon Inter Electronics

IGBT

Collector Current I C (A) Collector to Emitter Voltage V CE (V) 400 350 300 250 200 150 100 50 0 0 16 14 12 10 8 6...


Nihon Inter Electronics

PHMB200BS12

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Collector Current I C (A) Collector to Emitter Voltage V CE (V) 400 350 300 250 200 150 100 50 0 0 16 14 12 10 8 6 4 2 0 0 g (y ) TC=25°C VGE=20V 12V 11V 15V 10V 9V 1234 Collector to Emitter Voltage VCE (V) 8V 7V 5 IC=100A 200A 400A TC=25°C 4 8 12 16 Gate to Emitter Voltage VGE (V) 20 800 RL=3.0( TC=25°C 700 600 500 400 300 200 100 0 0 200 16 14 12 10 VCE=600V 400V 200V 8 6 4 2 400 600 800 1000 Total Gate Charge Qg (nC) 1200 0 1400 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage VGE (V) Capacitance C (pF) Collector Current I C (A) 400 350 300 250 200 150 100 50 0 0 16 14 12 10 8 6 4 2 0 0 VGE=20V 15V TC=125°C 12V 11V 10V 1234 Collector to Emitter Voltage VCE (V) 9V 8V 7V 5 IC=100A 200A 400A TC=125°C 4 8 12 16 Gate to Emitter Voltage VGE (V) 20 Collector to Emitter Voltage V CE (V) 300000 100000 30000 10000 VGE=0V f=1MHZ TC=25°C Cies 3000 1000 Coes 300 Cres 100 30 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 2 1.6 tOFF 1.2 VCC=600V RG=7.5( VGE=±15V TC=25°C Resistive Load Switching Time t (µs) 0.8 tf 0.4 0 0 50 100 150 Collector Current IC (A) tON tr(VCE) 200 Switching Time t (µs) 10 VCC=600V IC=200A VGE=±15V 3 TC=25°C Resistive Load 1 toff 0.3 ton tr(VCE) 0.1 tf 0.03 3 10 30 Series Gate Impedance RG (() 100 Switching Time t (µs) 10 3 tOFF 1 tf 0.3 tON VCC=600V RG=7.5( VGE=±15V TC=125°C Inductive Load 0.1 tr(Ic) 0.03 0.01 0 50 100 150 200 Collector Current IC (A) 2...




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