DatasheetsPDF.com

PDM1102H

Nihon Inter Electronics

MOSFET

MOSFET 110A 250V PDM1102H 108.0 P2HM1102H PDM1102H P2HM1102H 108.0 Approximate Weight :220g Maximum Ratings Ratin...


Nihon Inter Electronics

PDM1102H

File Download Download PDM1102H Datasheet


Description
MOSFET 110A 250V PDM1102H 108.0 P2HM1102H PDM1102H P2HM1102H 108.0 Approximate Weight :220g Maximum Ratings Rating Symbol Drain-Source Voltage VDSS VGS=0V Gate-Source Voltage Continuous Drain Current Duty=50% D.C. VGSS ID Pulsed Drain Current IDM Total Power Dissipation PD Operating Junction Temperature Range Tjw Storage Temperature Range Tstg RMS Isolation Voltage Mounting Torque 1 Viso - Ftor 3.0 2.0 Approximate Weight :220g Grade PDM1102H / P2HM1102H 250 20 110 c=25 80 c=25 220 c=25 420 c=25 40 +150 40 +125 2000 ,AC1 Terminals to Base, AC 1 min . Module Base to Heat sink Bus bar to Main Terminals Unit V V A A W V Nm DRAIN CURRENT ID (A) 240 200 160 120 80 40 0 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 8 6 4 2 0 0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V) DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 12 10 8 6 4 2 0 -40 0 40 80 120 160 JUNCTION TEMPERATURE Tj ( ) CAPACITANCE C (nF) 30 24 18 12 6 0 12 5 10 20 50 100 DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V) 16 5 SWITCHING TIME t ( s) 2 12 1 8 0.5 4 0 0 100 200 300 400 500 600 TOTAL GATE CHRAGE Qg (nC) 0.2 0.1 0.05 2 5 10 20 50 100 200 SERIES GATE IMPEDANCE RG ( ) SWITCHING TIME t (ns) 1000 500 200 100 50 20 10 2 1000 500 SWITCHING TIME t (ns) 200 100 50 5 10 20 50 DRAIN CURRENT ID (A) 100 200 20 10 2 500 200 100 50 20 10 5 2 1 0.5 0.5 2 5 10 20 50 100 200 DRAIN TO SOURCE VOLTAGE VDS (V) 500 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)