MOSFET
MOSFET 110A 250V
PDM1102H
108.0
P2HM1102H
PDM1102H P2HM1102H
108.0
Approximate Weight :220g Maximum Ratings
Ratin...
Description
MOSFET 110A 250V
PDM1102H
108.0
P2HM1102H
PDM1102H P2HM1102H
108.0
Approximate Weight :220g Maximum Ratings
Rating
Symbol
Drain-Source Voltage
VDSS
VGS=0V
Gate-Source Voltage Continuous Drain Current
Duty=50% D.C.
VGSS ID
Pulsed Drain Current
IDM
Total Power Dissipation
PD
Operating Junction Temperature Range
Tjw
Storage Temperature Range
Tstg
RMS Isolation Voltage
Mounting Torque
1
Viso -
Ftor
3.0 2.0
Approximate Weight :220g
Grade PDM1102H / P2HM1102H
250
20
110 c=25 80 c=25
220 c=25
420 c=25
40 +150
40 +125
2000
,AC1
Terminals to Base, AC 1 min .
Module Base to Heat sink
Bus bar to Main Terminals
Unit V V A A W
V Nm
DRAIN CURRENT ID (A)
240 200 160 120
80 40
0 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V)
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
8
6
4
2 0
0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V)
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
12 10
8 6 4 2 0 -40 0 40 80 120 160
JUNCTION TEMPERATURE Tj ( )
CAPACITANCE C (nF)
30
24
18
12
6
0 12
5 10 20
50 100
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
16 5
SWITCHING TIME t ( s)
2 12
1
8 0.5
4
0 0 100 200 300 400 500 600 TOTAL GATE CHRAGE Qg (nC)
0.2 0.1 0.05
2
5 10 20
50 100 200
SERIES GATE IMPEDANCE RG ( )
SWITCHING TIME t (ns)
1000 500
200 100
50
20 10
2
1000 500
SWITCHING TIME t (ns)
200 100
50
5 10 20
50
DRAIN CURRENT ID (A)
100 200
20 10
2
500
200 100
50
20 10
5
2
1
0.5 0.5
2 5 10 20 50 100 200 DRAIN TO SOURCE VOLTAGE VDS (V)
500
...
Similar Datasheet
- PDM1102H MOSFET - Nihon Inter Electronics