Document
ES2ABF THRU ES2JBF
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Amperes
0.146(3.70) 0.138(3.50)
0.051(1.30) 0.043(1.10)
0.051(1.30) 0.039(1.0)
SMBF
Cathode Band Top View
0.086(2.20) 0.075(1.90)
0.173(4.4) 0.165(4.2)
0.010(0.26) 0.0071(0.18)
0.216(5.5) 0.200(5.1)
Dimensions in inches and (millimeters)
FEATURES
For surface mounted applications Low profile package Glass Passivated Chip Junction Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU diretives
MECHANICAL DATA
Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS
Marking code
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100 C
VRRM VRMS VDC
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A
VF
Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C
IR
Maximum reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ,TSTG
ES2ABF
E2AB 50 35 50
ES2BBF E2BB
100 70 100
1.0
ES2DBF
E2DB 200 140 200
ES2GBF
E2GB 400 280 400
2.0
50
1.25 5.0 100.0 35 45.0 65.0 -55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
ES2JBF E2JB
600 420 600
1.65
UNITS
VOLTS VOLTS VOLTS
Amps
Amps
Volts µA ns pF C/W C
RATINGS AND CHARACTERISTIC CURVES ES2ABF THRU ES2JBF
Average Forward Current (A)
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm Noninductive
10 ohm Noninductive
trr
+0.5
+
25Vdc approx
-
1 ohm NonInductive
D.U.T
PULSE GENERATOR
Note 2
OSCILLOSCOPE Note 1
0 -0.25
Note:1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max. Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating 2.4
2.0
1.6
1.2
0.8 0.4 0.0
Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm) pad areas.
25 50 75 100 125 Lead Temperature (°C)
150
175
Fig.4 Typical Forward Characteristics
10 T J = 2 5°C
1.0
0.1
0.01
ES2ABF~ES2DBF ES2EBF/WS2GBF ES2JBF
0.001 0
0.5 1.0 1.5 2.0 Instaneous Forward Voltage (V)
2.5
Junction Capacitance (pF)
IR- Reverse Current (μA)
-1.0
10ns/div Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300 100
T J = 1 2 5°C
10 T J = 7 5°C
1.0
T J = 2 5°C
0.1 0
20 40 60
80
% of PIV.VOLTS
100
Fig.5 Typical Junction Capacitance
70
60
50
40
30 T J = 2 5°C
20 f = 1.0MHz Vsig = 50mVp-p
10
0.1 1 10 Reverse Voltage (V)
100
Fig.6 Maximum Non-Repetitive Peak Forward Surage Current
60
50
40
30
20 8.3 ms Single Half Sine Wave
10 (JEDEC Method)
00 1
10 Number of Cycles
100
Instaneous Forward Current (A)
Peak Forward Surage Current (A)
.