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ES2ABF Dataheets PDF



Part Number ES2ABF
Manufacturers MDD
Logo MDD
Description SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
Datasheet ES2ABF DatasheetES2ABF Datasheet (PDF)

ES2ABF THRU ES2JBF SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Amperes 0.146(3.70) 0.138(3.50) 0.051(1.30) 0.043(1.10) 0.051(1.30) 0.039(1.0) SMBF Cathode Band Top View 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) FEATURES For surface mounted applications Low profile package Glass Passivated Chip Junction Superfast reverse recovery time Lead free i.

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ES2ABF THRU ES2JBF SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Amperes 0.146(3.70) 0.138(3.50) 0.051(1.30) 0.043(1.10) 0.051(1.30) 0.039(1.0) SMBF Cathode Band Top View 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) FEATURES For surface mounted applications Low profile package Glass Passivated Chip Junction Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU diretives MECHANICAL DATA Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100 C VRRM VRMS VDC I(AV) Peak forward surge current 8.3ms single half sine-wave superimposed on IFSM rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A VF Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C IR Maximum reverse recovery time (NOTE 1) trr Typical junction capacitance (NOTE 2) CJ Typical thermal resistance (NOTE 3) RθJA Operating junction and storage temperature range TJ,TSTG ES2ABF E2AB 50 35 50 ES2BBF E2BB 100 70 100 1.0 ES2DBF E2DB 200 140 200 ES2GBF E2GB 400 280 400 2.0 50 1.25 5.0 100.0 35 45.0 65.0 -55 to +150 Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas ES2JBF E2JB 600 420 600 1.65 UNITS VOLTS VOLTS VOLTS Amps Amps Volts µA ns pF C/W C RATINGS AND CHARACTERISTIC CURVES ES2ABF THRU ES2JBF Average Forward Current (A) Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive trr +0.5 + 25Vdc approx - 1 ohm NonInductive D.U.T PULSE GENERATOR Note 2 OSCILLOSCOPE Note 1 0 -0.25 Note:1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.2 Maximum Average Forward Current Rating 2.4 2.0 1.6 1.2 0.8 0.4 0.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm) pad areas. 25 50 75 100 125 Lead Temperature (°C) 150 175 Fig.4 Typical Forward Characteristics 10 T J = 2 5°C 1.0 0.1 0.01 ES2ABF~ES2DBF ES2EBF/WS2GBF ES2JBF 0.001 0 0.5 1.0 1.5 2.0 Instaneous Forward Voltage (V) 2.5 Junction Capacitance (pF) IR- Reverse Current (μA) -1.0 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 100 T J = 1 2 5°C 10 T J = 7 5°C 1.0 T J = 2 5°C 0.1 0 20 40 60 80 % of PIV.VOLTS 100 Fig.5 Typical Junction Capacitance 70 60 50 40 30 T J = 2 5°C 20 f = 1.0MHz Vsig = 50mVp-p 10 0.1 1 10 Reverse Voltage (V) 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 60 50 40 30 20 8.3 ms Single Half Sine Wave 10 (JEDEC Method) 00 1 10 Number of Cycles 100 Instaneous Forward Current (A) Peak Forward Surage Current (A) .


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