MN2510

UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MN2510 is suitable for automobile power amplifiers, etc.  FEATURES * High DC current gain (MIN = 40 @VCE = 4V, IC = 12A) * High collector-emitter breakdown voltage (MIN = 100V)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MN2510L-x-T3P-T MN2510G-x-T3P-T Pin Assignment: B: Base C: Collector E: Emitter Package TO-3P Pin Assignment 123 BCE Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-020.a MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6V Collector Current IC 25 A Base Current Collector Power Dissipation (TC=25°C) IB Pc 5A 125 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Vol...