UNISONIC TECHNOLOGIES CO., LTD
MJE13003-R
NPN SILICON TRANSISTOR
NPN SILICON POWER TRANSISTOR
DESCRIPTION
These de...
UNISONIC TECHNOLOGIES CO., LTD
MJE13003-R
NPN SILICON
TRANSISTOR
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.
FEATURES
* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability
APPLICATIONS
* Switching
regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
MJE13003L-R-x-T92-B
MJE13003G-R-x-T92-B
MJE13003-L-R-x-T92-K
MJE13003G-R-x-T92-K
Note: Pin assignment: E: Emitter B: Base
C: Collector
Package
TO-92 TO-92
Pin Assignment 123 BCE BCE
Packing
Tape Box Bulk
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 8
QW-R221-022.A
MJE13003-R
NPN SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
Collector-Emitter Voltage
VCEO(SUS)
400
Collector-Base Voltage
VCBO
700
Emitter Base Voltage
VEBO
9
Collector Current
Continuous Peak (1)
IC ICM
1.5 3
Base Current
Continuous Peak (1)
IB IBM
0.75 1.5
Emitter Current
Continuous Peak (1)
IE IEM
2.25 4.5
Power Dissipation
TA=25°C TC=25°C
PD
1.1 1.5
Junction Temperature
TJ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are...