Document
UNISONIC TECHNOLOGIES CO., LTD
2SD1782
NPN EPITAXIAL SILICON TRANSISTOR
POWER NPN TRANSISTOR
DESCRIPTION
The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc.
FEATURES
* High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SD1782L-x-AE3-R
2SD1782G-x-AE3-R
SOT-23
Note: Pin Assignment: B: Base E: Emitter C: Collector
Pin Assignment 123 BEC
Packing Tape Reel
MARKING
D17 L: Lead Free G: Halogen Free
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
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QW-R206-107.D
2SD1782
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC 0.5 A
Collector Power Dissipation
PC 0.2 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance
CLASSIFICATION OF hFE
SYMBOL
TEST CONDITIONS
BVCBO IC=50µA
BVCEO IC=2mA
BVEBO IE=50µA
ICBO VCB=50V
IEBO VEB=4V
VCE(sat) IC=500 mA, IB=50mA
hFE VCE=3V, IC=100mA
fT VCE=10V, IE=-50mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
MIN TYP MAX UNIT 80 V 80 V 5V
0.5 µA 0.5 µA 0.2 0.5 V 120 390 120 MHz 7.5 pF
RANK RANGE
Q 120~270
R 180~390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-107.D
2SD1782
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-107.D
2SD1782
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this docume.