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2SD1782 Dataheets PDF



Part Number 2SD1782
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description NPN SILICON TRANSISTOR
Datasheet 2SD1782 Datasheet2SD1782 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc.  FEATURES * High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain  ORDERING INFORMATION Ordering Number Lead Fr.

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UNISONIC TECHNOLOGIES CO., LTD 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc.  FEATURES * High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD1782L-x-AE3-R 2SD1782G-x-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC Packing Tape Reel  MARKING D17 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-107.D 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance  CLASSIFICATION OF hFE SYMBOL TEST CONDITIONS BVCBO IC=50µA BVCEO IC=2mA BVEBO IE=50µA ICBO VCB=50V IEBO VEB=4V VCE(sat) IC=500 mA, IB=50mA hFE VCE=3V, IC=100mA fT VCE=10V, IE=-50mA, f=100MHz Cob VCB=10V, IE=0A, f=1MHz MIN TYP MAX UNIT 80 V 80 V 5V 0.5 µA 0.5 µA 0.2 0.5 V 120 390 120 MHz 7.5 pF RANK RANGE Q 120~270 R 180~390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-107.D 2SD1782  TYPICAL CHARACTERISTICS NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-107.D 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this docume.


2SC2073 2SD1782 2SK3666


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