BUK9K6R2-40E

LFPAK56D BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) > 0.5 V @ 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 12 resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 10 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 40 V - - 40 A - - 68 W - 5.27 6.2 mΩ - 5.8 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1...