Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-MOSFET,30V BSZ0503NSI
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
3.4
mΩ
ID 40 A
QOSS
10.6
nC
QG(0V..4.5V)
7.1
nC
OptiMOSTM5Power-MOSFET,30V BSZ0503NSI
TSDSON-8FL
(enlarged source interconnection)
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSZ0503NSI
Package PG-TSDSON-8 FL
Marking 0503NSI
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,30V
BSZ0503NSI
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3 Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,30V BSZ0503NSI
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse IAS EAS VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-20
-
-55
Values Typ. Max.
- 40 - 40 - 40 - 40 - 20
- 160
- 20
- 20
- 20
- 36 - 2.1
- 150
Unit Note/TestCondition
VGS=10V,TC=25°C VGS=10V,TC=100°C A VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W1)
A TC=25°C A TC=25°C mJ ID=20A,RGS=25Ω
V-
W
TC=25°C TA=25°C,RthJA=60K/W1)
°C
IEC climatic category; DIN IEC 68-1: 55/150/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area1)
RthJC RthJA
Min. -
Values Typ. Max. - 3.5
Unit Note/TestCondition K/W -
- - 60 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information
Final Data Sheet
4 Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,30V BSZ0503NSI
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage Breakdown voltage temperature coefficient Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance Transconductance
Symbol V(BR)DSS
Min. 30
dV(BR)DSS/dTj -
VGS(th) IDSS IGSS RDS(on) RG gfs
1.2
-
-
-
-
46
Values Typ. Max. --
15 -
-2 - 0.5 0.3 10 100 3.5 4.2 2.8 3.4 1.4 2.3 92 -
Unit Note/TestCondition
V VGS=0V,ID=10mA
mV/K ID=10mA,referencedto25°C
V VDS=VGS,ID=250µA
mA
VDS=24V,VGS=0V,Tj=25°C VDS=24V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=4.5V,ID=20A VGS=10V,ID=20A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1) Output capacitance1) Reverse transfer capacitance
Turn-on delay time
Ciss Coss Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min. -
-
-
-
Values Typ. Max. 960 1300 330 450 36 3-
3-
16 -
2-
Unit Note/TestCondition
pF VGS=0V,VDS=15V,f=1MHz
pF VGS=0V,VDS=15V,f=1MHz
pF VGS=0V,VDS=15V,f=1MHz
ns
VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=15V,VGS=1.