ROHS Product
BLM2010E
N-Channel Enhancement Mode Power MOSFET
Description
The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A Typ.RDS(ON)= 1...
