BLM2006NE

N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE Description The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM application ●Load switch Schematic diagram Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package 2006NE BLM2006NE SOT23-6L Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 7 30 1.25 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W Page1 www.belling.com.cn V2.0 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Gate-Body Leakage Curr...