PSMN2R0-30YLD
N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
11 December 2014
Pro...
PSMN2R0-30YLD
N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
11 December 2014
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “
SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated
Schottky or
Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “
SchottkyPlus” technology;
Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage
regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
4. Qui...
