SOT883B
PMZB390UNE
30 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel en...
SOT883B
PMZB390UNE
30 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Ultra thin package profile of 0.37 mm
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-8 -
8V
[1] - - 0.9 A
- 390 470 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMZB390UNE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
Graphic symbol
1 3
2
Transparent top view
DFN1006B-3 (SOT883B)
G
D
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZB390UNE
DFN1006B-3
Des...