Technical Data TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltag...
Technical Data
TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
60.0 V 60.0 V
5.0 V 5.0 A 1.0 A 100.0 W 1.75 °C/W 200.0 °C empty empty
NO. TYPE empty empty CASE empty empty
1N4902
PNP empty empty TO-3 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 200.0 mA
(1) 60.0
-
V
2. ICEO
VCE =60.0 V
- 1.0 mA
3. ICEX
VCE =60.0 V, VEB = 1.5 V
- 0.1 mA
4. ICEX
VCE = 60.0 V, VEB = 1.5 V, TC = 150.0° C
- 2.0 mA
5. ICBO
VCB =60.0 V
- 0.1 mA
6. IEBO
VBE = 5.0 V
- 1.0 mA
7. hFE
IC =1.0 A, VCE = 2.0 V
(1) 20.0
80.0
-
8. hFE
IC = 5.0 A, VCE = 2.0 V
(1) 7.0
-
-
9. VCE(SAT) IC = 1.0 A, IB = 0.1 A
(1) - 0.4 V
10. VCE(SAT) IC = 5.0 A, IB = 1.0 A
(1) - 1.5 V
11. VBE(ON)
IC = 1.0 A, VCE = 2.0 V
(1) - 1.2 V
12. fT
IC = 1.0 A, VCE = 10.0 V, f = 1.0 MHz
4.0 - MHz
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty
DIMENSIONS in mm
Marking 1N4902 Customer GENERAL PURPOSE
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