Document
Si6040
N-Channel Enhancement MOSFET
Si6040
Features
·Low On resistance. ·4.5V drive. ·RoHS compliant.
2,4
Package Dimensions
TO-252
1
3
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
60 +20 12 25 40 40 150 -55~+150
Unit
V V A A W W 0C 0C
Electrical Characteristics at Ta=250C
Parameter
Symbol
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V(BR)DSS IDSS IGSS VGS(th)
RDS(ON) RDS(ON)
Ciss Coss Crss
Conditions
ID=250uA, VGS=0V VDS=60V, VGS=0V VGS=+20V, VDS=0V VDS= VGS, ID=250uA ID=12A, VGS=10V ID=7A, VGS=4.5V VDS=30V, VGS=0V, f=1MHz VDS=30V, VGS=0V, f=1MHz VDS=30V, VGS=0V, f=1MHz
Ratings
min typ max
60 66
-
- -1
- - +100
1 1.70 2.5
- 30 40
- 33 50
- 510 -
- 60 -
- 23 -
Unit
V uA nA V mΩ mΩ pF pF pF
1
Si6040
Electrical Characteristics at Ta=250C (Continued)
Parameter
Symbol
Conditions
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
td(on) tr
td(off) tf Qg Qgs Qgd
VSD
VDS=30V, ID=1.5A, RGEN=1Ω, VGS=10V
VDS=30V, VGS=4.5V, ID=3A IS=3A, VGS=0V
Ratings min Typ max
-6-3- 16 - 2.8 - 11 -5- 4.8 - 0.88 1.2
Unit
nS nS nS nS nC nC nC V
2
Typical Characteristics at Ta=250C
Si6040
3
Si6040
Typical Characteristics at Ta=250C (Continued)
4
.