MDP1901

MDP1901 – 100V Single N-Channel Trench MOSFET MDP1901 Single N-channel Trench MOSFET 100V, 36A, 22mΩ General Description The MDP1901 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1901 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 36A @VGS = 10V  RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case TC=25oC TC=100oC TC=25oC TC=100oC Jan. 2021. v1.4 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V ±20 V 36 A 24 A 144 A 34 W 14 200 mJ -55~150 oC Symbol RθJA RθJC Rating 65 1.02 Unit oC/W Magnachip Semiconductor Ltd. MDP1901 – 100V Single N-Channel Trench MOSFET Ordering Information Part Number MDP1901TH Temp. Range -55~150oC Package TO-220 Packing Tube Rohs Status Halogen Free Electrical Characteristics (Tc =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Char...