ESM3004

Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 75 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty 600.0 V 400.0 V 10.0 V 120.0 A 20.0 A 400.0 W 0.25 °C/W 175.0 °C empty empty NO. TYPE empty empty CASE empty empty ESM3004 NPN HI-POWER empty TO-83_M-12 empty empty PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. BVCEO IC = 0.5 A (1) 400.0 - V 2. BVEBO IE = 0.2 A (1) 10.0 - V 3. ICEV VCE = 600.0 V, VEB = 1.5 V, TJ = 125.0° C - 5.0 mA 4. ICER VCE = 600.0 V, RBE = 10.0 Ω, TJ = 125.0° C - 10.0 mA 5. IEBO VEB = 5.0 V - 30.0 mA 6. VCE(SAT) IC = 65.0 A, IB = 13.0 A, TJ = 100.0° C (1) - 1.5 V 7. VCE(SAT) IC = 100.0 A, IB = 33.0 A, TJ = 100.0° C (1) - 2.0 V 8. VBE(SAT) IC = 65.0 A, IB =13.0 A, TJ = 100.0° C (1) - 2.2 V 9. tON VCC = 200.0 V, IC = 65.0 A, IB = 13.0 A (2) - 1.5 µs 10. ts VCC = 200.0 V, IC = 65.0 A, IB = 13.0 A (2) - 3.5 µs 11. tf VCC = 200.0 V, IC = 65.0 A, IB = 13.0 A (2) - 1.0 µs 12. 13. 14. 15. 16. 17. 18. 19. 20. Notes (1)typ. value / pulse-tested tp≤300µs, duty cycle ≤2% (2)typical value empty empty DIMENSIONS in mm Marking ESM3004 Customer GENERAL PURPOSE ...