Technical Data TRANSISTOR
maximum ratings
VDS VDG VGS ID IDM IG Max. Power Dissipation (PT) at TA = 25° C Max. Thermal...
Technical Data
TRANSISTOR
maximum ratings
VDS VDG VGS ID IDM IG Max. Power Dissipation (PT) at TA = 25° C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
25.0 V
25.0 V
25.0 V
30.0 mA
empty
A
10.0 mA
0.3 W
500.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
2N4382 P-CHANNEL FET empty TO-18 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVGSS
IG = 1.0 µA
(1) 25.0
-
V
2. IGSS
VGS = 15.0 V
- 1.0 nA
3. IDSS
VDS = 15.0 V
(1) 10.0
30.0
mA
4. Vp
VDS = 15.0 V, ID = 1.0 mA
- 9.0 V
5. Yfs
VDS = 15.0 V
4.0 8.0 mS
6. Cis
VDS = 10.0 V
- 20.0 pF
7. Crs
VDS = 10.0 V
- 5.0 pF
8. RDS(ON)
ID = 1.0 mA
(2) -
350.0
Ω
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % (2)typical value empty empty
DIMENSIONS in mm
Marking 2N4382 Customer GENERAL PURPOSE
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