OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175...
OptiMOS®-T Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
Product Summary VDS RDS(on),max ID
IPB64N25S3-20
250 V 20 m 64 A PG‐TO263‐3‐2
Type IPB64N25S3-20
Package PG-TO263-3-2
Marking 3PN2520
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Symbol
Conditions
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V1)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25°C I D=27A
Avalanche current, single pulse
I AS -
Reverse diode dv /dt
dv /dt
Gate source voltage Power dissipation Operating and storage temperature
V GS
-
P tot T C=25°C
T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
64
46
256 270 27
6 ±20 300 -55 ... +175 55/175/56
Unit A
mJ A kV/µs V W °C
Rev. 1.1
page 1
2014-09-12
Parameter
Symbol
Conditions
Thermal characteristics1), 3)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
-
-
minimal footprint 6 cm2 cooling area2)
IPB64N25S3-20
min.
Values typ.
Unit max.
- - 0.5 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
250 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=270µA
2.0
3.0
4.0
Zero gate...
