advance specification
GTVA261701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
