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S20C90C

Mospec Semiconductor

Schottky Barrier Power Rectifiers

MOSPEC S20C70C Thru S20C100C Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum ...


Mospec Semiconductor

S20C90C

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Description
MOSPEC S20C70C Thru S20C100C Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory Plating pb free The marking is indicated by “S20C70CM~S20C100CM” SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 70-100 VOLTS TO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol 70C VRRM VRWM VR 70 RMS Reverse Voltage VR(RMS) 49 Average Rectifier Forward Current Total Device (Rated VR),TC=100 IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFM IFSM Operating and Storage Junction Temperature Range TJ , TSTG S20C 80C 90C Unit 100C 80 90 100 V 56 63 70 V 10 20 A 20 A 200 A -65 to +150 DIM MILLIMETERS MIN MAX A 14.68 15.32 B 9.78 10.42 C 5.02 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 2.66 G 1.12 1.36 H 0.72 ...




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