PXAC243502FV
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Description
The PXAC243502FV LD...
PXAC243502FV
High Power RF LDMOS Field Effect
Transistor 350 W, 28 V, 2300 – 2400 MHz
Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC243502FV Package H-37275-4
Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR
20
55
18 Efficiency 45
16 Gain
14
35 25
12 15
Features
Asymmetric design - Main: 150 W P1dB - Peak: 200 W P1dB
Broadband internal matching
CW performance at 2350 MHz, 28 V - Ouput power = 250 W P1dB - Efficiency = 46% - Gain = 16 dB
Integrated ESD protection
Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
Low thermal resist...
