PTFA261301E

PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA261301E Package H-30260-2 Adj. Channel Power Ratio (dBc) Drain Efficiency (%) 3-Carrier CDMA2000 Performance at 28 Volts IDQ = 1.4 A, ƒ = 2680 MHz -10 30 Efficiency -20 25 -30 20 -40 Alt2 15 Alt -50 10 -60 ACPR 5 -70 0 0 5 10 15 20 25 30 35 Output Power, avg. (W) PTFA261301F Package H-31260-2 Features Thermally-enhanced, Pb-free packages, RoHS-compliant Broadband internal matching Typical CDMA performance at 2.68 GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24% Typical CW performance, 2680 MHz, 28 V - Output power at P–1dB = 152 W - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power RF Performance CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.4 A, POUT = 26 W average, ƒ = 2680 MHz Characteristic Symbol Min Typ Max Unit Adjacent Channel Power Ratio ACPR — –45 — dBc Gain Dra...