PTFA260451E

PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA260451E Package H-30265-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz 60 -40 50 Alt_1 2.5 MHz 40 Adj 2.135 MHz 30 -45 -50 -55 20 -60 10 Efficiency -65 0 -70 25 30 35 40 45 50 Output Power, Avg. (dBm) Features Lead-free, RoHS-compliant and thermallyenhanced packaging Internal matching for wideband performance Typical three-carrier CDMA2000 performance - Average output power = 10 W - Gain = 14 dB - Efficiency = 24% - ACPR = –52 dBc Typical CW performance - Output power at P–1dB = 50 W - Efficiency = 46% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power RF Performance CDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 10 W AVG, ƒ = 2680 MHz Characteristic Adjacent Channel Power Ratio Gain Drain Efficiency Symbol Min Typ ACPR — –45 Gps — 14 ηD — 24 Max — — — Uni...