PTFA212401F

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio (dB) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW -30 35 -35 ACPR Up -40 -45 ACPR Low 30 25 20 -50 15 -55 -60 36 Efficiency 38 40 42 44 46 Average Output Power (dBm) 10 5 48 Features Thermally-enhanced packages, Pb-free and RoHS compliant Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 dB - Average output power = 47.0 dBm - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35 dBc - Adjacent channel power = –40 dBc Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB - Average output power = 49 dBm - Linear Gain = 15.8 dB - Efficiency = 34% - Adjacent channel power = –33 dBc Typical CW performance, 214...