LFPAK56
PSMN041-80YL
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
1 May 2013
Product data sheet
1. General de...
LFPAK56
PSMN041-80YL
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
1 May 2013
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive LFPAK56 package is footprint compatible with other Power-SO8 types Qualified to 175 °C
3. Applications
DC-to-DC converters Load switch TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 175 °C; Fig. 13; Fig. 12
Dynamic characteristics
QGD QG(tot)
gate-drain charge total gate charge
VGS = 10 V; ID = 5 A; VDS = 64 V; Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit - - 80 V - - 25 A - - 64 W
-
32.8 41
mΩ
- - 103 mΩ
- 4.3 - nC - 21.9 - nC
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PSMN041-80YL
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repeti...