UNISONIC TECHNOLOGIES CO., LTD UT3419
20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC...
UNISONIC TECHNOLOGIES CO., LTD UT3419
20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V.
The UTC UT3419 can be applied in PWM applications or used as a load switch.
FEATURES
* RDS(ON) ≤ 70 mΩ @ VGS=-10V, ID=-3.5A * RDS(ON) ≤ 80 mΩ @ VGS=-4.5V, ID=-3.0A * RDS(ON) ≤ 130 mΩ @ VGS=-2.5V, ID=-1.0A
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3419L-AE2-R
UT3419G-AE2-R
UT3419L-AE3-R
UT3419G-AE3-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23-3 SOT-23
Pin Assignment
1
2
3
G
S
D
G
S
D
Packing
Tape Reel Tape Reel
MARKING
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QW-R502-391.J
UT3419
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage Gate to Source Voltage
VDSS
-20
V
VGSS
±12
V
Continuous Drain Current (Note 1)
TA=25°C TA=70°C
ID
-3.5 -2.8
A A
Pulsed Drain Current (Note 2)
IDM
-15
A
Total Power Dissipation (Note 1)
TA=25°C TA=70°C
PD
0.6 0.4
W W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional d...